Symposium | |
|
|
|
Venue | |
|
|
|
|
|
Information | |
|
|
|
|
|
|
|
Sponsorship | |
|
|
Submission | |
|
|
Program | |
|
|
|
|
|
Registration | |
|
Instructions | |
|
|
|
|
Post Symposium | |
|
|
|
Previous Events | |
|
|
|
Contacts |
|
PLENARY LECTURES AND VIP GUESTS
|
Chandrabhan Dohare
Banaras Hindu University
Dielectric Behaviour, Phenomenon Of A.c. Conduction And Density Of Defect States (dos) In Chalcogenide Semiconducting Se70te28m2 (m=ag, Cd, Zn) Glasses
1st Intl. Symp. on Synthesis and Properties of Nanomaterials for Future Energy Demands
Back to Plenary Lectures »
|
Abstract:
A detailed study of conduction mechanism of glassy Se70Te28M2 (M=Ag, Cd, Zn) systems has been carried out in terms of dielectric and a.c. conductivity. Temperature and frequency dependent dielectric, loss tangent and a.c. conductivity for the same systems were measured in the frequency spectrum, 1 KHz -1 MHz and temperature, 303-338K range. The a.c. conductivity, i³ac is found to be proportional to (where, s < 1). The temperature dependence of both a.c. conductivity and frequency exponent 's' is reasonably well interpreted by the correlated barrier hopping (CBH) model. We showed that the bi-polaron hopping is dominant over the potential barrier and estimated the density of defect states (DOS) at 50 KHz. We found a good agreement in fitting of data (single and bi-polaron conductivity) with experimental results. Surface and structural morphology of as-prepared semiconducting glasses were confirmed by XRD, SEM and TEM. Glass kinetics (glass transition and crystallization) was interpreted by differential scanning calorimetry (DSC).
|
|
|
Translate site in 50+ languages |
Flogen is not responsable for translation
|
Notebook |
<<
May 2024 >>
- 27
- 28
- 29
- 30
- 31
- 1
- 2
- 3
- 4
- 5
- 6
- 7
- 8
- 9
|
|
Weather |
|
|
|